3DD13001 0.2a , 600v npn plastic-encapsulated transistor elektronische bauelemente 19-aug-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 emitter 1 base collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features power switching applications classification of h fe(1) product-rank 3DD13001-a 3DD13001-b range 17~23 20~26 absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 600 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 7 v collector current - continuous i c 0.2 a collector power dissipation p c 750 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 600 - - v i c =0.1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 400 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 7 - - v i e =0.1ma, i c =0 collector cut C off current i cbo - - 100 a v cb =600v, i e =0 i ceo - - 200 v ce =400v, i b =0 emitter cut C off current i ebo - - 100 a v eb =7v, i c =0 dc current gain h fe (1) 17 - 26 v ce =20v, i c =20ma h fe (2) 5 - - v ce =10v, i c =0.25ma collector to emitter saturation voltage v ce(sat) - - 0.5 v i c =50ma, i b =10ma base to emitter saturation voltage v be(sat) - - 1.2 v i c =50ma, i b =10ma transition frequency f t 8 - - mhz v ce =20v, i c =20ma, f =1mhz fall time t f - - 0.3 s i b1 = -i b2 =5ma v cc =45v, i c =50ma storage time t s - - 1.5 s 1 11 1 base 2 22 2 collector 3 33 3 emitter to-92 a c e f d g h j b ref. millimeter ref. mil limeter min. max. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76
3DD13001 0.2a , 600v npn plastic-encapsulated transistor elektronische bauelemente 19-aug-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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